Reliability challenges of candidate metal systems to replace traditional Cu wiring in future
interconnects are discussed. From a reliability perspective, a key opportunity is …

A comprehensive review of challenges and potential solutions associated with the impact of
downscaling of integrated circuit (IC) feature sizes on on-chip interconnect materials is …

The performance of modern chips is strongly related to the multi-layer interconnect structure
that interfaces the semiconductor layer with the outside world. The resulting demand to …

The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …

Sputter deposition describes the process of depositing material from a target onto a sample
using ionized atoms in a vacuum environment. By accelerating ionized atoms through a …

Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect
metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires …

The relentless miniaturization of transistors drives the search for alternative metals to copper
for low-dimension interconnects. Indeed, some elementary metals, like ruthenium, become …

Because semiconductor devices have become ultraminiaturized, the degradation of
conductivity due to the resistivity size effect of metal thin films is an unavoidable problem …

Electromigration and resistivity of Cu, Co and Ru on-chip interconnections have been
investigated. Non-linered Co and Ru interconnects can have better interconnect resistance …

Along with deep scaling transistors and complex electronics information exchange networks,
very-large-scale-integrated (VLSI) circuits require high performance and ultra-low power …