Nonvolatile memories based on graphene and related 2D materials

S Bertolazzi, P Bondavalli, S Roche, T San… - Advanced …, 2019 - Wiley Online Library
The pervasiveness of information technologies is generating an impressive amount of data,
which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads …

Graphene‐based materials: synthesis, characterization, properties, and applications

X Huang, Z Yin, S Wu, X Qi, Q He, Q Zhang, Q Yan… - small, 2011 - Wiley Online Library
Graphene, a two‐dimensional, single‐layer sheet of sp2 hybridized carbon atoms, has
attracted tremendous attention and research interest, owing to its exceptional physical …

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

M Sup Choi, GH Lee, YJ Yu, DY Lee… - Nature …, 2013 - nature.com
Atomically thin two-dimensional materials have emerged as promising candidates for
flexible and transparent electronic applications. Here we show non-volatile memory devices …

[HTML][HTML] Temperature-and thickness-dependent electrical conductivity of few-layer graphene and graphene nanosheets

XY Fang, XX Yu, HM Zheng, HB Jin, L Wang, MS Cao - Physics Letters A, 2015 - Elsevier
We established a calculation model of the conductivity of multilayer graphene based on
Boltzmann transport equation and 2D electron gas theory. Numerical simulations show that …

Ferroelectric field effect transistors for electronics and optoelectronics

H Jiao, X Wang, S Wu, Y Chen, J Chu… - Applied Physics …, 2023 - pubs.aip.org
Ferroelectric materials have shown great value in the modern semiconductor industry and
are considered important function materials due to their high dielectric constant and tunable …

Optoelectrical Molybdenum Disulfide (MoS2)Ferroelectric Memories

A Lipatov, P Sharma, A Gruverman, A Sinitskii - ACS nano, 2015 - ACS Publications
In this study, we fabricated and tested electronic and memory properties of field-effect
transistors (FETs) based on monolayer or few-layer molybdenum disulfide (MoS2) on a lead …

Multifunctional MoTe2 Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

J Gao, X Lian, Z Chen, S Shi, E Li… - Advanced Functional …, 2022 - Wiley Online Library
Abstract The “Internet‐of‐Things”‐based information society requires the devices to possess
high scaling capability as well as rich functionalities. Hybrid systems coupling 2D …

Decade of 2D-materials-based RRAM devices: a review

MM Rehman, HMMU Rehman, JZ Gul… - … and technology of …, 2020 - Taylor & Francis
Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and
physical properties over the past decade owing to their ultrathin, flexible, and multilayer …

MoS2 nanosheets for top-gate nonvolatile memory transistor channel

HS Lee, SW Min, MK Park, YT Lee, PJ Jeon, JH Kim… - …, 2012 - inha.elsevierpure.com
Top-gate ferroelectric memory transistors with single-to triple-layered MoS 2 nanosheets
adopting poly (vinylidenefluoride-trifluoroethylene)[P (VDF-TrFE)] are demonstrated. The …

Graphene flash memory

AJ Hong, EB Song, HS Yu, MJ Allen, J Kim, JD Fowler… - ACS …, 2011 - ACS Publications
Graphene's single atomic layer of sp2 carbon has recently garnered much attention for its
potential use in electronic applications. Here, we report a memory application for graphene …