A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications
M Saravanan, E Parthasarathy - Microelectronics Journal, 2021 - Elsevier
Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and
metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant …
metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant …
WITHDRAWN: SS< 30 mV/dec; Hybrid tunnel FET 3D analytical model for IoT applications
Withdrawal Notice WITHDRAWN: SS< 30 mV/dec; Hybrid tunnel FET 3D analytical model for
IoT applications Ajaykumar Dharmireddy a, Avinash Sharma b, M. Sushanth Babu c …
IoT applications Ajaykumar Dharmireddy a, Avinash Sharma b, M. Sushanth Babu c …
Alloy engineered nitride tunneling field-effect transistor: A solution for the challenge of heterojunction tfets
Being fundamentally limited to a current-voltage steepness of 60mV/dec, MOSFETs struggle
to operate below 0.6 V. Further reduction in V DD and, consequently, power consumption …
to operate below 0.6 V. Further reduction in V DD and, consequently, power consumption …
Impact of body thickness and scattering on III–V triple heterojunction TFET modeled with atomistic mode-space approximation
The triple heterojunction tunnel field-effect transistor (TFET) has been originally proposed to
resolve the TFET's low ON-current challenge. The carrier transport in such devices is …
resolve the TFET's low ON-current challenge. The carrier transport in such devices is …
First-principles WC-GGA and mBJ calculations for structural, electronic, optical and elastic properties of MxGa1-xSb (M= Al, In, B) ternary alloys
GaSb based ternary alloys have indicated wide range variations in physical, electronic and
optical properties. In the present study the structural, electronic, optical and elastic properties …
optical properties. In the present study the structural, electronic, optical and elastic properties …
Doping profile engineered triple heterojunction TFETs with 12-nm body thickness
Triple heterojunction (THJ) tunneling field-effect transistors (TFETs) have been proposed to
resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is …
resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is …
Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth
The selective area growth technique, confined epitaxial lateral overgrowth (CELO), enables
the growth of lateral III-V heterojunctions integrated on mismatched substrates. In CELO …
the growth of lateral III-V heterojunctions integrated on mismatched substrates. In CELO …
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors
In this paper, we analyze experimental data from state-of-the-art vertical
InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors (TFETs) to study the …
InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors (TFETs) to study the …
[PDF][PDF] Performance study and analysis of heterojunction gate all around nanowire tunneling field effect transistor
M Roohy, R Hosseini - Journal of Optoelectronical …, 2019 - jopn.marvdasht.iau.ir
In this paper, we have presented a heterojunction gate all around nanowiretunneling field
effect transistor (GAA NW TFET) and have explained its characteristicsin details. The …
effect transistor (GAA NW TFET) and have explained its characteristicsin details. The …