Ge doped ZnO films have been deposited on Si (100) substrates by alternate rf sputtering of
ZnO and Ge. The effects of doping and annealing on the optical and structural properties …

Transmission electron microscopy and X-ray photoelectron spectroscopy analyses are
performed to investigate Ge nanoparticles embedded in an amorphous SiO 2 matrix. GeSiO …

A large quantity of monocrystalline germanium nanorods and their arrays were produced on
a porous anodic alumina (PAA) template utilizing saturated vapor adsorption, during which …

Microcavity organic light-emitting diodes (MC-OLEDs) based on porous silicon distributed
Bragg reflectors (PS-DBRs) have been realized, and improved structural, optical, and …

Germanium oxide thin films on silicon substrate were produced using pulsed laser
deposition method under adjusted substrate temperature and oxygen pressure. There …

Ge nanocrystals embedded in HfO 2 matrices were prepared by rf magnetron sputtering
technique. Transmission electron micrographs reveal the formation of spherical shape Ge …

Photoluminescence (PL) and Raman scattering have been used to study the defect-related
growth of Ge nanocrystals during annealing of Ge+-implanted SiO2 films. Under 250 nm (∼ …

Samples of nanocrystalline 74Ge embedded in amorphous SiO2 film were prepared by
74Ge ion implantation and subsequent primary thermal annealing. These samples were …

Strong violet–blue photoluminescence (PL) band peaked at around 410 nm was obtained in
Ge oxide films fabricated using magnetron sputtering of single crystal Ge target in diluted …

The saturated vapor adsorption (SVA) method is adopted to fabricate nanorods, nanotubes,
and special nanostructures with the assistance of template. Here, germanium tubular …