Reported herein is an active and durable CoN‐containing oxygen evolution reaction (OER)
electrocatalyst which efficiently functions in a neutral medium (pH≈ 7). The composite …

The atomic layer technique is generating a lot of excitement and study due to its profound
physics and enormous potential in device fabrication. This article reviews current …

Spin‐charge interconversion phenomena at the interface between magnetic materials and
topological insulators (TIs) are attracting enormous interest in the research effort toward the …

Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal–Organic
Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis …

Organic pollutants and Cr (VI) were primary water contaminants that form stable chelate
complexes, making them more difficult to remove. Herein, a series of Co-ene/SnS nanorods …

Atomic layer deposition (ALD) is known as a key enabler of the continuous advances in
device engineering for microelectronics. For instance, the state-of-the-art transistor …

Interfacing ferromagnetic materials with topological insulators is an intriguing strategy in
order to enhance spin-to-charge conversion mechanisms, paving the way toward highly …

We report on the growth of a ferromagnetic cobalt electrode by atomic layer deposition
(ALD) and demonstrate it as a functional spin source in complete magnetic tunnel junctions …

Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion
symmetry in their crystal structure are promising materials for generating and absorbing spin …

When coupled with ferromagnetic layers (FM), topological insulators (TI) are expected to
boost the charge‐to‐spin conversion efficiency across the FM/TI interface. In this context, a …