Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …

Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to
probe novel properties in two-dimensional oxides. Here, we observe a giant flexoelectric …

A topological meron features a non-coplanar structure, whose order parameters in the core
region are perpendicular to those near the perimeter. A meron is half of a skyrmion, and both …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

We report on the thickness scaling behavior of ferroelectric Sc 0.3 Al 0.7 N (ScAlN) films
grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Ferroelectricity features the electrical switching of off-centered ions between the potential
double well of the non-centrosymmetric lattice, while ionic conduction requires long-range …

For over 70 years, ferroelectric materials have been one of the central research topics for
condensed matter physics and material science, an interest driven both by fundamental …