Machine learning and artificial intelligence (ML/AI) are rapidly becoming an indispensable
part of physics research, with domain applications ranging from theory and materials …

Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because
they are easily integrated with multiple mainstream semiconductor platforms. However, the …

In many cases, electron counting with direct detection sensors offers improved resolution,
lower noise, and higher pixel density compared to conventional, indirect detection sensors …

Electron beam damage in transmission electron microscopy (TEM) is complicated because
the damage phenomena can be the result of random atomic displacements or collective …

Much of the dramatic growth in research on topological materials has focused on
topologically protected surface states. While the domain walls of topological materials such …

Mechanical displacement in commonly used piezoelectric materials is typically restricted to
linear or biaxial in nature and to a few percent of the material dimensions. Here, we show …

As a promising candidate for next‐generation nonvolatile memory devices, ferroelectric
oxide films exhibit many emergent phenomena with functional applications, making …

Electric field control of topologically nontrivial magnetic textures, such as skyrmions,
provides a paradigm shift for future spintronics beyond the current silicon-based technology …

The ability to manipulate domains underpins function in applications of ferroelectrics. While
there have been demonstrations of controlled nanoscale manipulation of domain structures …

Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-
centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices …