Light-triggered, enhancement-mode AlInN/GaN HEMTs with sub-microsecond switching times
Light-triggered, AlInN/GaN high-electron-mobility transistors (HEMTs) are presented.
Selective thermal oxidation of the AlInN barrier between the source and drain depletes the …
Selective thermal oxidation of the AlInN barrier between the source and drain depletes the …
Growth and characterization of AlInN/GaN superlattices
Data are presented on near-lattice-matched Al 1-x In x N/GaN superlattices (SLs) with
superior morphology to thick AlInN layers. The SLs are grown by metalorganic chemical …
superior morphology to thick AlInN layers. The SLs are grown by metalorganic chemical …
[HTML][HTML] Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions
Data on the growth and characterization of AlInN/GaN superlattices (SLs) with varying AlInN
fractions are presented. The SLs are grown using metal–organic chemical vapor deposition …
fractions are presented. The SLs are grown using metal–organic chemical vapor deposition …
Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates
Enhancement mode AlInN/gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
are fabricated by thermally oxidizing the barrier region under the gate. The oxidation is …
are fabricated by thermally oxidizing the barrier region under the gate. The oxidation is …