We investigated the optical and the vibrational properties of amorphous SiO x N y: H thin
films deposited on silicon substrate using the plasma enhanced chemical vapor deposition …

Control of the residual film stress to the desired levels is critical for the design and fabrication
of high-quality micro-bolometers for terahertz (THz) detectors. In this work, a stress …

Residual stress characterization in microelectromechanical systems (MEMS) structures is
discussed in this chapter. Residual stress characterization in MEMS structures is of inherent …

The zirconia thin films (80–120nm thick) were deposited on (100) silicon substrate using
metal organic chemical vapor deposition. The effect of oxygen partial pressure during the …

This paper investigates the potential of passivation coatings for surface acoustic wave
devices (SAW) based on aluminum nitride as a piezoelectric layer to operate at …

US8970008B2 - Wafer and integrated circuit chip having a crack stop structure - Google Patents
US8970008B2 - Wafer and integrated circuit chip having a crack stop structure - Google Patents …

The examination on β-FeSi2 thin films prepared via facing-target sputtering onto Si (111),
subjected to rapid thermal annealing under varying temperatures of 200–800° C, revealed …

In the work, silicon films were obtained from SiH4 by plasma-enhanced chemical vapors
deposition. The influence of deposition temperature (200–650 C) and gas mixture pressure …

Final capping insulation layer is a critical step in the microfabrication process that
determines the lifetime of analytical microsensors in real fluids. Actual processes encounter …

How to accurate predict the topology of a constituted wafer and its warpage would be critical
in improving processing reliabilities. Traditionally, Stoney equation has been widely used to …