Ultra-thin solar cells are of significant interest for use in space due to their intrinsic radiation
tolerance, which may allow them to be used in particularly harsh radiation environments …

Hexagonal Si1–x Ge x with suitable alloy composition promises to become a new silicon
compatible direct bandgap family of semiconductors. Theoretical calculations, however …

With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …

Recovering ubiquitous low grade waste heat can lower the amount of global net energy
generation required and would thereby support the transition to renewable energy sources …

This study describes a comprehensive analysis of light trapping and photon recycling (PR)
in thin-film GaAs solar cells, explicitly considering the effects of (non-perfect) light scattering …

Direct bandgap group IV semiconductors, like strained Ge, GeSn, or hexagonal SiGe, are
considered promising for photonic integration on silicon. For group IV semiconductor lasers …

Voltage‐dependencies were observed in the external quantum efficiency (EQE) spectra of
ultrathin GaAs solar cells. The subbandgap tail was shown to increase going from forward to …

Dielectrics are often employed for high-reflectivity mirrors in semiconductor devices, since
they leverage total internal reflection to reduce optical losses at semiconductor/metal …

With 70% of the world's primary energy consumption being lost as heat during conversion,
finding ways to make use of this waste heat is a key challenge. One way is to convert it back …

Non-destructive, reliable, and accurate measurements of low doping levels and carrier
lifetimes in small direct-bandgap semiconductors such as indium arsenide (InAs) at room …