High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

RP Ortiz, A Facchetti, TJ Marks - Chemical reviews, 2010 - ACS Publications
The search for high dielectric constant (high-k) gate dielectric materials for field-effect
transistor-enabled (FET) applications has stimulated important research activities in both …

Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

ML Green, EP Gusev, R Degraeve… - Journal of Applied …, 2001 - pubs.aip.org
The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

[图书][B] Computational Electronics: semiclassical and quantum device modeling and simulation

D Vasileska, SM Goodnick, G Klimeck - 2017 - books.google.com
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Theory of ballistic nanotransistors

A Rahman, J Guo, S Datta… - IEEE Transactions on …, 2003 - ieeexplore.ieee.org
Numerical simulations are used to guide the development of a simple analytical theory for
ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small …

Essential physics of carrier transport in nanoscale MOSFETs

M Lundstrom, Z Ren - IEEE Transactions on Electron Devices, 2002 - ieeexplore.ieee.org
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model
transistor. The physics of charge control, source velocity saturation due to thermal injection …

Two-dimensional quantum mechanical modeling of nanotransistors

A Svizhenko, MP Anantram, TR Govindan… - Journal of Applied …, 2002 - pubs.aip.org
Quantization in the inversion layer and phase coherent transport are anticipated to have
significant impact on device performance in “ballistic” nanoscale transistors. While the role of …

Low ballistic mobility in submicron HEMTs

MS Shur - IEEE Electron Device Letters, 2002 - ieeexplore.ieee.org
Ballistic effects in short channel high electron mobility transistors (HEMTs) greatly reduce the
field effect mobility compared to that in long gate structures. This reduction is related to a …

Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime

J Kedzierski, P Xuan, EH Anderson… - … Digest. IEDM (Cat …, 2000 - ieeexplore.ieee.org
Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to
15 nm. Complementary low-barrier silicides were used to reduce contact and series …

Nanoscale MOSFETs: Physics, simulation and design

Z Ren - 2001 - search.proquest.com
This thesis discusses device physics, modeling and design issues of nanoscale transistors
at the quantum level. The principle topics addressed in this report are (1) an implementation …

Silicon integrated circuit technology from past to future

H Iwai, S Ohmi - Microelectronics Reliability, 2002 - Elsevier
Tremendous progress of the silicon integrated circuits (ICs) has been driven by the
downsizing of their components such as MOS field effect transistors (MOSFETs) over 30 …