Advances of the top-down synthesis approach for high-performance silicon anodes in Li-ion batteries

AP Yuda, PYE Koraag, F Iskandar… - Journal of Materials …, 2021 - pubs.rsc.org
With a remarkable theoretical specific capacity of∼ 4200 mA hg− 1, silicon anodes are at
the forefront of enabling lithium-ion batteries (LIBs) with ultra-high energy density. However …

Structuring of Si into multiple scales by metal‐assisted chemical etching

RP Srivastava, DY Khang - Advanced Materials, 2021 - Wiley Online Library
Structuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

AD Refino, N Yulianto, I Syamsu, AP Nugroho… - Scientific reports, 2021 - nature.com
Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is
challenging particularly in terms of controlling wire property and geometry to improve the …

Top-down nanofabrication approaches toward single-digit-nanometer scale structures

DK Oh, H Jeong, J Kim, Y Kim, I Kim, JG Ok… - Journal of Mechanical …, 2021 - Springer
Sub-10 nm nanostructures have received broad interest for their intriguing nano-optical
phenomena, such as extreme field localization and enhancement, quantum tunneling effect …

Low loss Ge-on-Si waveguides operating in the 8–14 µm atmospheric transmission window

K Gallacher, RW Millar, U Griškevičiūte… - Optics express, 2018 - opg.optica.org
Germanium-on-silicon waveguides were modeled, fabricated and characterized at
wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for …

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

RE Warburton, G Intermite, M Myronov… - … on Electron Devices, 2013 - ieeexplore.ieee.org
The design, modeling, fabrication, and characterization of single-photon avalanche diode
detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 …

The thermoelectric properties of Ge/SiGe modulation doped superlattices

A Samarelli, L Ferre Llin, S Cecchi, J Frigerio… - Journal of applied …, 2013 - pubs.aip.org
The thermoelectric and physical properties of superlattices consisting of modulation doped
Ge quantum wells inside Si 1− y Ge y barriers are presented, which demonstrate …

High sensitivity Ge-on-Si single-photon avalanche diode detectors

LF Llin, J Kirdoda, F Thorburn, LL Huddleston… - Optics Letters, 2020 - opg.optica.org
The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of
26µm diameter is presented. Record low dark count rates are observed, remaining less than …

Integrated nonlinear photonics in the longwave-infrared: A roadmap

D Ren, C Dong, D Burghoff - MRS Communications, 2023 - Springer
This article presents an overview of the current status and future prospects of integrated
nonlinear photonics in the long-wave infrared (LWIR) spectrum, spanning 6 to 14 μm. This …

Optical activation of germanium plasmonic antennas in the mid-infrared

MP Fischer, C Schmidt, E Sakat, J Stock, A Samarelli… - Physical review …, 2016 - APS
Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma
response in intrinsic germanium structures fabricated on a silicon substrate. This direct …