Conformality in atomic layer deposition: Current status overview of analysis and modelling
V Cremers, RL Puurunen, J Dendooven - Applied Physics Reviews, 2019 - pubs.aip.org
Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
G Dingemans, WMM Kessels - … of Vacuum Science & Technology A, 2012 - pubs.aip.org
The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Plasma-assisted atomic layer deposition: basics, opportunities, and challenges
HB Profijt, SE Potts, MCM Van de Sanden… - Journal of Vacuum …, 2011 - pubs.aip.org
Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …
Silicon surface passivation by atomic layer deposited Al2O3
Thin Al 2 O 3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer
deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different …
deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different …
Atomic layer deposition
M Ritala, M Leskelä - Handbook of Thin Films, 2002 - Elsevier
Publisher Summary This chapter deals with atomic layer deposition (ALD), which is a
chemical gas phase thin film deposition method based on alternate saturative surface …
chemical gas phase thin film deposition method based on alternate saturative surface …
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
Atomic‐layer‐deposited aluminium oxide (Al2O3) is applied as rear‐surface‐passivating
dielectric layer to passivated emitter and rear cell (PERC)‐type crystalline silicon (c‐Si) solar …
dielectric layer to passivated emitter and rear cell (PERC)‐type crystalline silicon (c‐Si) solar …
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
From lifetime measurements, including a direct experimental comparison with thermal Si O
2, a-Si: H, and as-deposited a-Si N x: H, it is demonstrated that Al 2 O 3 provides an …
2, a-Si: H, and as-deposited a-Si N x: H, it is demonstrated that Al 2 O 3 provides an …
In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
E Langereis, SBS Heil, HCM Knoops… - Journal of Physics D …, 2009 - iopscience.iop.org
In this paper recent work on the application of in situ spectroscopic ellipsometry (SE) during
thin film synthesis by atomic layer deposition (ALD) is reviewed. In particular, the versatility …
thin film synthesis by atomic layer deposition (ALD) is reviewed. In particular, the versatility …
19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon
We present a both‐sides‐contacted thin‐film crystalline silicon (c‐Si) solar cell with a
confirmed AM1. 5 efficiency of 19.1% using the porous silicon layer transfer process. The …
confirmed AM1. 5 efficiency of 19.1% using the porous silicon layer transfer process. The …