We have developed an analytic model that describes in detail the establishment of self-
ordered profiles during semiconductor epitaxy on corrugated surfaces. Lateral, self-ordered …

We demonstrate that a single photoexcited InGaAs semiconductor quantum dot (QD) grown
by organo-metallic chemical vapor deposition on prepatterned substrates emits one photon …

We studied the uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor
quantum dots (QDs) grown by organometallic chemical vapor deposition on prepatterned …

In this paper we present a review on major advances achieved over the past ten years in the
field of fabrication of semiconductor quantum wires (QWRs) using epitaxial growth …

Structural and optical properties of submonolayer CdSe/ZnSe superlattices grown with
varying thickness of the ZnSe spacer layer are studied. High-resolution electron microscopy …

The effect of hydrostatic pressure and temperature on the ground state binding energy of
hydrogenic impurities is investigated in a GaAs/Ga0. 7Al0. 3As cylindrical quantum well wire …

Publisher Summary This chapter summarizes the comprehensive understanding of linear
excitonic spectra from quantum nanostructures with disorder. The description of the relevant …

We propose a lateral effective potential which allows a straightforward calculation of electron
and hole states in V-groove quantum wires. This effective potential is used together with a …

High symmetry epitaxial quantum dots (QDs) with three or more symmetry planes provide a
very promising route for the generation of entangled photons for quantum information …

A superlattice of strained Au–Si atomic wires is successfully fabricated on a Si surface. Au
atoms are known to incorporate into the stepped Si (111) surface to form a Au–Si atomic …