Effect of annealing temperature and ambience on roughened GaN substrate
Improving light extraction of GaN-on-GaN LEDs is still a challenge. This work attempted to
address this issue by investigating the effect of temperature and ambience of annealing in …
address this issue by investigating the effect of temperature and ambience of annealing in …
High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure
K Zhang, T Takahashi, D Ohori, G Cong… - Semiconductor …, 2020 - iopscience.iop.org
A nanodisk array of blue InGaN/GaN multiple quantum wells was made using neutral beam
etching (NBE) followed by GaN regrowth. The NBE-fabricated nanodisk presented a vertical …
etching (NBE) followed by GaN regrowth. The NBE-fabricated nanodisk presented a vertical …
GaN nanowire Schottky barrier diodes
G Sabui, VZ Zubialevich, M White… - … on Electron Devices, 2017 - ieeexplore.ieee.org
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire
(NW) structures and the principle of dielectric REduced SURface Field (RESURF) is …
(NW) structures and the principle of dielectric REduced SURface Field (RESURF) is …
Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
AY Polyakov, LA Alexanyan, ML Skorikov… - Journal of Alloys and …, 2021 - Elsevier
Abstract Time-resolved photoluminescence (PL), current-voltage characteristics and deep
trap spectra of nanopillar GaN/InGaN multi-quantum-well (MQW) light emitting diodes …
trap spectra of nanopillar GaN/InGaN multi-quantum-well (MQW) light emitting diodes …
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns (NCs)
via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by …
via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by …
Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
Core-shell nanorod based light-emitting diodes (LEDs) with their exposed non-polar
surfaces have the potential to overcome the limitations of planar LEDs by circumventing the …
surfaces have the potential to overcome the limitations of planar LEDs by circumventing the …
Precessed electron diffraction study of defects and strain in GaN nanowires fabricated by top-down etching
Gallium nitride (GaN) nanowires (NWs) have been fabricated by top-down etching from GaN
heteroepitaxial films, which provides an accurate control of their position and dimensions …
heteroepitaxial films, which provides an accurate control of their position and dimensions …
Thermal stability of crystallographic planes of GaN nanocolumns and their overgrowth by metal organic vapor phase epitaxy
Thermal annealing of top− down fabricated GaN nanocolumns (NCs) was investigated over
a wide range of temperatures for ammonia-rich atmospheres of both nitrogen and hydrogen …
a wide range of temperatures for ammonia-rich atmospheres of both nitrogen and hydrogen …
Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography
A comprehensive description of a procedure to form dense locally ordered 2D arrays of
vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations …
vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations …
[图书][B] Gallium Nitride Nanostructured Power Semiconductor Devices
G Sabui - 2017 - search.proquest.com
Gallium nitride (GaN) has emerged as a promising material for development of power
semiconductor devices owing to its superior material characteristics. Fabricated GaN power …
semiconductor devices owing to its superior material characteristics. Fabricated GaN power …