An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is
proposed. Admittance parameters of the device are extracted from circuit analysis and …

This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters
of DH-DD-TM-SG MOSFET. Y parameters have been modeled using different small-signal …

An improved model of a modified intrinsic equivalent circuit of delta‐doped
AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically …

Modelling of optically illuminated MOSFET is done considering the substrate effect to
evaluate admittance and scattering parameters for microwave frequency applications …

A fringing field‐effect‐dependent MOSFET equivalent‐circuit model for its microwave
frequency applications has been developed. The thermal noise performance of the device …

This paper presents a comprehensive analytical study of an AlGaN/GaN MODFET for the
evaluation of scattering parameters including the important figure of merits like trans …

An efficient, direct method to extract the admittance parameters and an accurate small‐
signal equivalent circuit model of an MOS transistor for RF applications have been …

Los avances en la tecnología de fabricación de transistores MOS para aplicaciones en
sistemas de comunicación en el rango de las micro-ondas, ha sido posible gracias al …

This letter investigates design considerations and impact of technological parametric
variations on microwave performance of gate electrode workfunction engineered recessed …

“Common sense is prejudice developed before the age of eighteen” were the words of
renowned scientist A. Einstein. The quote is in suitable place to begin the discussion on the …