Abstract III–N–V semiconductors are promising materials for use in next-generation
multijunction solar cells because these materials can be lattice matched to substrates such …

Doped by isovalent or heterovalent foreign impurities, II-VI semiconductor compounds
enable control of optical and electronic properties, making them ideal in detectors, solar …

We present a new analytical approach for understanding and tuning the composition of
ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial …

The development of new applications has driven the field of materials design and synthesis
to investigate materials that are not thermodynamically stable phases. Materials which are …

We have investigated the role of the nitrogen content, the growth parameters, and the
annealing processes involved in molecular beam epitaxy of GaInNAs solar cells lattice …

The correlation between the As to group III flux ratio and photovoltaic performance of GaIn
0.1 N 0.03 As solar cells fabricated by molecular beam epitaxy is systematically investigated …

We propose a method that solves the problem of the independent determination of the
indium and nitrogen concentrations in a strained quaternary InGaAsN superlattice. The …

We have derived a statistical model of zinc-blende ternary group-III nitrides, assuming the
crystal lattice distortion due to lattice constant mismatch to make the major contribution to the …

The temperature dependence of photoluminescence (PL) and photoreflectance (PR) was
studied on a 10 nm GaInNAs/GaAs single quantum well prepared by molecular-beam …

We have investigated growth of GaInNAs by MOCVD using dimethylhydrazine (DMHy) and
by CBE using RF-radical nitrogen. It was found that there was a large difference in nitrogen …