[HTML][HTML] Inkjet printing for flexible and wearable electronics

K Yan, J Li, L Pan, Y Shi - Apl Materials, 2020 - pubs.aip.org
Flexible and wearable electronic devices are emerging as the novel platform for portable
health monitoring, human–machine interaction, and some other electronic/optic …

Inkjet‐printed wearable nanosystems for self‐powered technologies

TT Huang, W Wu - Advanced Materials Interfaces, 2020 - Wiley Online Library
The scalable production of nanomaterials‐based electronic components with mechanically
compliable form factors not only provides interesting research topics but also ushers in …

Printing flexible thin-film transistors

G Zhang, Y Xu, M Haider, J Sun, D Zhang… - Applied Physics …, 2023 - pubs.aip.org
Flexible thin-film transistors (f-TFTs) not only attract research attention but also possess
significant application potential in various fields, such as consumer electronics, human …

High Quality Inkjet Printed‐Emissive Nanocrystalline Perovskite CsPbBr3 Layers for Color Conversion Layer and LEDs Applications

G Vescio, JL Frieiro… - Advanced Materials …, 2022 - Wiley Online Library
Metal halide perovskites (MHPs) have shown outstanding optical emissive properties and
can be employed in several optoelectronics devices. In contrast with materials of well …

Inkjet-printed h-BN memristors for hardware security

K Zhu, G Vescio, S González-Torres, J López-Vidrier… - Nanoscale, 2023 - pubs.rsc.org
Inkjet printing electronics is a growing market that reached 7.8 billion USD in 2020 and that
is expected to grow to∼ 23 billion USD by 2026, driven by applications like displays …

Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications

S González, G Vescio, JL Frieiro… - Advanced Materials …, 2023 - Wiley Online Library
Abstract Transparent Conducting Oxides (TCOs) are an enticing family of optoelectronic
materials which have been proven to increase efficiency when incorporated into perovskite …

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory

KJ Heo, HS Kim, JY Lee, SJ Kim - Scientific Reports, 2020 - nature.com
In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO2/n-type Si-based
resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO …

Impact of the barrier layer on the high thermal and mechanical stability of a flexible resistive memory in a neural network application

P Pal, S Mazumder, CW Huang, DD Lu… - ACS Applied …, 2022 - ACS Publications
An artificial synaptic device with continuous conductance variation is essential for the
hardware implementation of bioinspired neuromorphic systems. With increasing …

Modulation of resistive switching and magnetism of HfOx film by Co doping

T Guo, H Huang, X Huang, Y Wang, L Duan… - Journal of Alloys and …, 2022 - Elsevier
The coexistence of resistive switching and magnetism modulation of Co doped HfO x
samples with different doping concentrations was reported in this work. The chemical …

Uniform switching behavior of HfOx-based memory with gradual-grown filaments by interface modulation

T Guo, Y Wang, L Duan, J Fan, Z Wang - Vacuum, 2021 - Elsevier
Abstract HfO x/Cu/HfO x structures with Ti electrodes were fabricated to investigate the
resistive switching characteristics. Stable and uniform switching behaviors can be observed …