W Zawadzki, P Pfeffer - Semiconductor Science and Technology, 2003 - iopscience.iop.org
We review the spin splitting of subband energies caused by bulk and structure inversion asymmetries in semiconductor III–V and II–VI heterostructures. We present both theoretical …
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in …
I? rst heard of k· p in a course on semiconductor physics taught by my thesis adviser William Paul at Harvard in the fall of 1956. He presented the k· p Hamiltonian as a semiempirical …
Abstract In two-dimensional (2D) hole systems the inversion asymmetry induced spin splitting differs remarkably from its familiar counterpart in the conduction band. While the so …
EL Ivchenko, AY Kaminski, U Rössler - Physical Review B, 1996 - APS
The reduced point symmetry C 2 v of a zinc-blende-based (001) interface allows mixing between heavy-and light-hole states even under normal incidence. We have generalized …
EAA e Silva, GC La Rocca, F Bassani - Physical Review B, 1997 - APS
The spin-orbit splitting in the dispersion relation for electrons in III-V semiconductor asymmetric quantum wells is studied within the standard envelope-function formalism …
A method is developed for eliminating spurious solutions from eight-band k⋅ p theory. It reduces the bulk dispersion to a cubic equation (quadratic along< 001> and< 111>), yet …
M Helm - Semiconductors and semimetals, 1999 - Elsevier
Publisher Summary This chapter focuses on the basic aspects of intersubband transitions, with the main emphasis on linear absorption. An expression for the intersubband absorption …
JP Lu, JB Yau, SP Shukla, M Shayegan, L Wissinger… - Physical review …, 1998 - APS
We report quantitative experimental and theoretical results revealing the tunability of spin splitting in high-mobility two-dimensional GaAs hole systems, confined to either a square or …