Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of
excellent characteristics, enabling them to overcome the performance limitations of …

This paper compares different photocathodes that are applicable for electron injector
systems and summarizes the development in cathode technology in the last years. The …

This article presents an extensive study and demonstration of efficient electrothermal large-
signal GaN HEMT modeling approaches based on combined techniques of Genetic …

Effective heat dissipation is the bottleneck problem for the development and
commercialization of GaN-based high-power electronic and photonic devices. To address …

Abstract Machine learning‐based efficient temperature‐dependent small‐signal modelling
approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors …

This paper explores and develops efficient temperature‐dependent small‐signal modeling
approaches for GaN high electron mobility transistors (HEMTs). The multilayer perceptron …

In this work, we present the fabrication and investigation of the properties of quasi-vertical
gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates …

Thick epitaxial GaN power switching devices are known to contain a high density of crystal
defects, especially threading dislocations in the epitaxial layer. The impact of these defects …

The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT)
heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free …