A novel current density based design approach of low-noise amplifiers

M Tarkhan, M Sawan - IEEE Access, 2022 - ieeexplore.ieee.org
The input-referred noise (IRN) is one of the most crucial performance indicators for the
analog front-end (AFE) of neural recording devices. In this study, we present a novel design …

A wide range constant transconductance circuit based on negative feedback for analog circuits

RK Palani, S Agrawal, AA Khan… - … on Circuits and …, 2024 - ieeexplore.ieee.org
This paper presents a fixed transconductance circuit based on the impedance matching. The
proposed technique does not depend on the square law model of the transistors and tracks …

Design criteria of high temperature integrated circuits using standard SOI CMOS process up to 300° C

C Sbrana, A Catania, M Paliy, S Di Pascoli… - IEEE …, 2024 - ieeexplore.ieee.org
In this paper, we discuss the challenges at the device and circuit level that must be
addressed to design reliable silicon CMOS integrated circuits operating in high-temperature …

Design-oriented single-piece explicit IV DC charge-based model for MOS transistors in nanometric technologies

J Poupon, MJ Barragan, A Cathelin, S Bourdel - IEEE Access, 2024 - ieeexplore.ieee.org
This paper proposes a design-oriented DC model for MOS transistors in advanced
nanometric technologies, based on only six parameters. The proposed model is based on …

A gm/Id based methodology to estimate OTA requirements in low-pass discrete time Σ∆-ADCs

A Mostafa, JRRO Martins, J Juillard… - … Symposium on Circuits …, 2024 - ieeexplore.ieee.org
This paper presents an analytical analysis to estimate the optimal slew rate (SR) and gain
bandwidth (GBW) requirements of operational transconductance amplifiers (OTA) in discrete …

A general gm/Id temperature-aware design methodology using 180 nm CMOS up to 250° C

JRRO Martins… - Journal of …, 2022 - centralesupelec.hal.science
The advent of the Internet-of-Things brings new challenges in circuit design. The presence
of circuits and sensors in harsh environments brought the need for methodologies that …

On MOSFET Threshold Voltage Extraction Over the Full Range of Drain Voltage Based on Gm/ID

N Makris, M Bucher - arXiv preprint arXiv:2106.00747, 2021 - arxiv.org
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source
voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is …

Transconductance-to-Current Ratio Based Threshold Voltage Extraction in MOSFETs from Linear to Saturation Modes

M Bucher, N Makris, L Chevas - 2023 IEEE Latin American …, 2023 - ieeexplore.ieee.org
The present work describes a technique for extracting MOSFET threshold voltage from linear
to saturation modes. Based on the charge-based model, transconductance-to-current ratio …

A 237 ppm/° C L-Band Active Inductance Based Voltage Controlled Oscillator in SOI 0.18 µm

J Martins, F Alves, PM Ferreira - 2021 34th SBC/SBMicro/IEEE …, 2021 - ieeexplore.ieee.org
Multi-frequency receivers have become a standard for Global Navigation Satellite Systems
(GNSS) and Global Positioning Systems (GPS) applications. In smart vehicle applications …

A Temperature-Aware Framework for Analog Design Using a gm/ID Approach

JRR de Oliveira Martins - 2021 - theses.hal.science
The fourth industrial revolution and the Internet of things introduce new challenges to
reliable circuit design. In this context, new transports circuits must be able to reliably work at …