Over the past decades extensive research has been carried out to study the lasing
characteristics of random media. Some unexpected phenomena of random lasing action …

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of
high performing designs of light emitting diodes and photovoltaic devices. In this paper we …

Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)
N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by …

Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of
nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting …

The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular
beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free …

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and
nanotube (NT)-like nanostructures on Si (111) substrates covered with a thin AlN layer …

We have investigated the impact of surface recombination on the effective carrier injection
efficiency and the Joule heating of axial InGaN/GaN nanowire light-emitting diodes (LEDs) …

We show that a 4 μm thick GaN layer grown by metal-organic vapour phase epitaxy can be
transformed into a well-organized array of GaN nanowires (NWs) using displacement Talbot …

As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs
are the focus of recent development efforts in solid state lighting as they offer distinct …

Semiconductor nanowire arrays have been identified as a promising platform for future light
emitting diodes (LEDs), for example, due to the materials science freedom of combining …