Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for
numerous photonic, optoelectronic and biomedical applications owing to their low-cost …

Selective area growth is a promising technique to realize semiconductor–superconductor
hybrid nanowire networks, potentially hosting topologically protected Majorana-based …

We report on individual-InAs nanowire optoelectronic devices which can be tailored to
exhibit either negative or positive photoconductivity (NPC or PPC). The NPC photoresponse …

We present a study of electron gas properties in InAs nanowires determined by interaction
between nanowire geometry, doping and surface states. The electron gas density and space …

III–V nanowires are candidate building blocks for next generation electronic and
optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are …

One-dimensional ballistic transport is demonstrated for a high-mobility InAs nanowire
device. Unlike conventional quantum point contacts (QPCs) created in a two-dimensional …

InAs nanowire-based back-gated field-effect transistors realized starting from individual InAs
nanowires are investigated at different temperatures and as building blocks of inverter …

We compare and discuss the two most commonly used electrical characterization
techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and …

We report a method for growing rectangular InAs nanofins with deterministic length, width,
and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can …

We present a comprehensive electrical characterization of an InAs/InP nanowire (NW)
heterostructure, comprising of two InP barriers forming a quantum dot (QD), two adjacent …