2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga's figure-of-merit
CW Tsou, KP Wei, YW Lian… - IEEE Electron Device …, 2015 - ieeexplore.ieee.org
In this letter, we demonstrate high-performance AlGaN/GaN Schottky barrier diodes (SBDs)
on Si substrate with a recessed-anode structure for reduced turn-on voltage VON. The …
on Si substrate with a recessed-anode structure for reduced turn-on voltage VON. The …
Effect of N2O/BCl3 cyclical recess etching technique used prior to anode metal deposition in AlGaN/GaN Schottky barrier diodes
KP Hsueh, HC Wang, SC Chen, JW Chiu… - ECS Journal of Solid …, 2017 - iopscience.iop.org
Abstract This paper presents AlGaN/GaN Schottky barrier diodes (SBDs) with plasma
treatment and recessed anodes for use in high-power and high-temperature electronics …
treatment and recessed anodes for use in high-power and high-temperature electronics …