Numerous of the greatest inventions in modern society, such as solar cells, display panels,
and transistors, rely on a simple concept: An external stimulus is applied to a material and …

Next-generation integrated circuit devices based on transition-metal-oxides are expected to
boast a variety of extraordinary properties, such as superconductivity, transparency in the …

Applying stress to a ferroelastic material results in a nonlinear strain response as domains of
different orientations mechanically switch. The ability to write, erase and move domain walls …

Two-dimensional electron gas (2DEG) formed at oxide heterointerfaces via atomic layer
deposition (ALD) has attracted considerable interest toward fascinating electron-related …

Materials with a large linear magnetoresistance (MR) are great candidates for magnetic
sensors, but rarity boosts investigations for exploring this MR in material physics. 2D …

The rich functionalities of transition-metal oxides and their interfaces bear an enormous
technological potential. Its realization in practical devices requires, however, a significant …

The ability to tailor oxide heterointerfaces has led to novel properties in low‐dimensional
oxide systems. A fundamental understanding of these properties is based on the concept of …

Conducting oxide interfaces have attracted considerable attention, motivated by both
fundamental science and potential for oxide electronic devices. An important gap for …

Magnetic field-induced changes in the electrical resistance of materials reveal insights into
the fundamental properties governing their electronic and magnetic behavior. Various …

High-electron-mobility transistors (HEMTs) based on Al x Ga 1− x N/Ga N heterostructures
have great potential for applications in power electronics and radio frequency applications …