A 16-element 140–160-GHz phased array transceiver is reported. The chipset is fabricated
using STMicroelectronics' 55-nm SiGe BiCMOS process. Five different chips are …

This letter presents single-ended and differential D-band power amplifiers (PAs) in 55nm
SiGe BiCMOS technology. The proposed PAs exploit the remarkable features of common …

This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter,
integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied …

We report a-band waveguide diplexer, with two passbands of 130–134 and 151.5–155.5
GHz, fabricated using micro laser sintering (MLS) additive manufacturing with stainless …

This paper presents a fully integrated D-band true time delay (TTD) circuit designed in 0.13
µm silicon-germanium (SiGe) BiCMOS technology. It provides a relative time delay of 0.446 …

This letter presents a fully integrated three-stage single-ended D-band power amplifier (PA)
designed in 0.13-μm silicon-germanium (SiGe) BiCMOS technology. Several bandwidth …

This paper presents a study of the D-band radio solutions, with beam-steering functionality,
intended for use in the reconfigurable meshed network. The regulation and radio network …

Emerging applications in D-band (110–170GHz) demand amplifiers with high gain-
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …

This paper presents a design flowchart, design equations, and design of a D-band Rotman
lens beam-steering microstrip array antenna at 110–145 GHz operating frequency. The …

The legacy frequency bands of 42 GHz and below are in practice saturated in densely
populated regions, like Central Europe. In the last decade new frequency bands have been …