Impact of CMOS technology scaling on the atmospheric neutron soft error rate

P Hazucha, C Svensson - IEEE Transactions on Nuclear …, 2000 - ieeexplore.ieee.org
We investigated scaling of the atmospheric neutron soft error rate (SER) which affects
reliability of CMOS circuits at ground level and airplane flight altitudes. We considered …

Characterization of soft errors caused by single event upsets in CMOS processes

T Karnik, P Hazucha - IEEE Transactions on Dependable and …, 2004 - ieeexplore.ieee.org
Radiation-induced single event upsets (SEUs) pose a major challenge for the design of
memories and logic circuits in high-performance microprocessors in technologies beyond …

Soft error rate mitigation techniques for modern microcircuits

DG Mavis, PH Eaton - 2002 IEEE International Reliability …, 2002 - ieeexplore.ieee.org
A unique circuit hardening technique is described, which can totally eliminate both alpha
and neutron induced soft errors from deep submicron microcircuits. This hardening …

Particle interaction and displacement damage in silicon devices operated in radiation environments

C Leroy, PG Rancoita - Reports on Progress in Physics, 2007 - iopscience.iop.org
Silicon is used in radiation detectors and electronic devices. Nowadays, these devices
achieving submicron technology are parts of integrated circuits of large to very large scale …

Computational method to estimate Single Event Upset rates in an accelerator environment

M Huhtinen, F Faccio - Nuclear Instruments and Methods in Physics …, 2000 - Elsevier
We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator
environment, which is characterized by a complicated radiation spectrum. Our method is …

Trading off transient fault tolerance and power consumption in deep submicron (DSM) VLSI circuits

A Maheshwari, W Burleson… - IEEE transactions on very …, 2004 - ieeexplore.ieee.org
High fault tolerance for transient faults and low-power consumption are key objectives in the
design of critical embedded systems. Systems like smart cards, PDAs, wearable computers …

Extensions of the burst generation rate method for wider application to proton/neutron-induced single event effects

E Normand - IEEE Transactions on Nuclear Science, 1998 - ieeexplore.ieee.org
The Burst Generation Rate (BGR) method, originally developed to calculate single event
upset (SEU) rates in microelectronics due to neutrons and protons, has been extended for …

Single event effects in power MOSFETs and SRAMs due to 3 MeV, 14 MeV and fission neutrons

A Hands, P Morris, C Dyer, K Ryden… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a
fusion facility and to a fission neutron spectrum with a californium-252 source. Single event …

Quantifying the Double-Sided Neutron SEU Threat, From Low Energy (Thermal) and High Energy ( MeV) Neutrons

E Normand, K Vranish, A Sheets… - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
Quantifying the Double-Sided Neutron SEU Threat, From Low Energy (Thermal) and High
Energy (<formula formulatype="inline Page 1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE …

A new approach for the prediction of the neutron-induced SEU rate

C Vial, JM Palau, J Gasiot, MC Calvet… - IEEE transactions on …, 1998 - ieeexplore.ieee.org
A new approach for SEU rate prediction in components submitted to neutron environment is
presented. The method aims to take into account the characteristics of the secondary …