As a typical representative of the third-generation semiconductor materials, GaN is an ideal
substrate for the fabrication of blue-green lasers, RF microwave devices, and power …

In this article, an ohmic contact structure based on indium tin oxide (ITO)/Ti/Al/Ni/Au is
explored for high-performance GaN-on-GaN Schottky barrier diode (SBD) for the first time …

In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-
inch free-standing (FS)-GaN is presented with the specific on-state resistance (R on) of 1.34 …

In the framework of fully vertical GaN-on-Silicon device technology development, we report
on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face …

Low‐resistivity Ohmic contacts to Gallium‐face (G‐aface) and/or Nitrogen‐face (‐Nface) n‐
GaN are undoubtedly needed for high‐quality vertical power devices. Contrary to Ga‐face n …

The effect of O 2 plasma treatment on the electrical properties of Ti/Al (20/200 nm) contact to
N (Nitrogen)-face n-GaN of vertical light-emitting diodes (VLEDs) has been investigated by …

In this work, we propose a new approach to obtain as-deposited low-resistivity transparent
ZnO: Al (AZO) ohmic contacts to n-GaN N-face by first modifying the GaN surface by …

This letter reports a systematic study about the effect of surface stoichiometry induced by
inductively coupled plasma (ICP) etching on the ohmic contact to N-face n-GaN. It is found …

The electrical properties of gallium nitride (GaN) substrate are crucial to the performance of
vertical power devices. Bulk GaN substrates with carrier concentrations in the range from …

In der vorliegenden Arbeit werden Aspekte der Chipprozessierung untersucht, die die
Zuverlässigkeit von (InAlGa) N-basierten Rippenwellenleiterlaserdioden beeinflussen. Als …