Fabrication technology of SiGe hetero-structures and their properties

Y Shiraki, A Sakai - Surface Science Reports, 2005 - Elsevier
SiGe hetero-structures have a high potential to improve the state-of-art Si devices
particularly VLSIs and add such new functions as optics and also provide a new scientific …

Deformation and diffusion modes in nanocrystalline materials

IA Ovid'Ko - International materials reviews, 2005 - journals.sagepub.com
An overview of theoretical models of plastic deformation and diffusion processes in
nanocrystalline (nano–grained) materials is presented. The key experimentally detected …

High-performance near-and mid-infrared crystalline coatings

GD Cole, W Zhang, BJ Bjork, D Follman, P Heu… - Optica, 2016 - opg.optica.org
Substrate-transferred crystalline coatings have recently emerged as a groundbreaking new
concept in optical interference coatings. Building upon our initial demonstration of this …

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform

R Sittig, C Nawrath, S Kolatschek, S Bauer… - …, 2022 - degruyter.com
The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with
outstanding optical properties, typically emitting at a wavelength of around 900 nm. The …

Surface–dislocation interaction by various models of surface elasticity

MA Grekov - International Journal of Engineering Science, 2024 - Elsevier
The effect of applying different surface elasticity models related to the Gurtin–Murdoch and
Steigmann–Ogden theories to the problem on an interaction of a dislocation row with a flat …

Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells

RM France, JF Geisz, MA Steiner, B To… - Journal of Applied …, 2012 - pubs.aip.org
Surface crosshatch roughness typically develops during the growth of lattice-mismatched
compositionally graded buffers and can limit misfit dislocation glide. In this study, the …

On the role of interfacial elasticity in morphological instability of a heteroepitaxial interface

G Shuvalov, S Kostyrko - Continuum Mechanics and Thermodynamics, 2021 - Springer
In this paper, we discuss a theoretical approach to morphological instability analysis of the
coherent interphase boundaries in strained heterostructures. Taking into account the fact …

Self-running Ga droplets on GaAs (111) A and (111) B surfaces

S Kanjanachuchai, C Euaruksakul - ACS Applied Materials & …, 2013 - ACS Publications
Thermal decomposition of GaAs (111) A and (111) B surfaces in ultrahigh vacuum results in
self-running Ga droplets. Although Ga droplets on the (111) B surface run in one main …

Strain-engineered biaxial tensile epitaxial germanium for high-performance Ge/InGaAs tunnel field-effect transistors

M Clavel, P Goley, N Jain, Y Zhu… - IEEE Journal of the …, 2015 - ieeexplore.ieee.org
The structural, morphological, and energy band alignment properties of biaxial tensile-
strained germanium epilayers, grown in-situ on GaAs via a linearly graded In x Ga 1-x As …

A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si (001)

BZ Liu, J Nogami - Journal of applied physics, 2003 - pubs.aip.org
Dysprosium disilicide can form nanowires and three dimensional 3D islands on the Si001
surface. The nanowire density and width are metal coverage dependent. Various …