Practical applications implementing integrated photonic circuits can benefit from nonlinear
optical functionalities such as wavelength conversion, all-optical signal processing, and …

Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

In its 60 years of existence, the field of nonlinear optics has gained momentum especially
over the past two decades thanks to major breakthroughs in material science and …

Recent advances in integrated nonlinear material platforms and low-loss optical
microresonators enabled a broad range of chip-scale optical applications, such as optical …

In this work, we report an optical method for characterizing crystal phases along single-
semiconductor III–V nanowires based on the measurement of polarization-dependent …

We demonstrate high quality (Q) factor microring resonators in high index-contrast GeSbSe
chalcogenide glass waveguides using electron-beam lithography followed by plasma dry …

We report parametric gain by utilizing non-linearities in a semiconductor Bragg Reflection
Waveguide (BRW) waveguide chip. Under the two-mode degenerate type II phase …

The AlGaAs material platform has been intensively used to develop nonlinear photonic
devices on-a-chip, thanks to its superior nonlinear optical properties. We propose a new …

We present inductively-coupled-plasma, reactive-ion-etching (ICP-RIE) techniques with 2
orders of magnitude difference in etch rates, for the Al_xGa_1-xAs material system. These …

Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap
wavelength λ_g= 366 nm (for Wurtzite GaN) and transparency window covering the visible …