Ü Özgür, YI Alivov, C Liu, A Teke… - Journal of applied …, 2005 - pubs.aip.org
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action …
L Li, J Zhou, X Wang, J Gracia, M Valvidares… - Advanced …, 2023 - Wiley Online Library
Spin‐polarization is known as a promising way to promote the anodic oxygen evolution reaction (OER), since the intermediates and products endow spin‐dependent behaviors, yet …
Defects are critically important for metal oxides in chemical and physical applications. Compared with the often studied oxygen vacancies, engineering metal vacancies in n-type …
P Singh, R Kumar, RK Singh - Industrial & Engineering Chemistry …, 2019 - ACS Publications
ZnO nanoparticles are still a hot area for research even after ample work has been done by researchers across the world. It is a versatile material for doping of different transition metals …
Present communication reports fabrication of visible sensor based on ZnS: Mn/p-Si heterostructure. Herein, Pure and Mn+ 2 doped ZnS nanocrystalline thin films structures …
H Zeng, G Duan, Y Li, S Yang, X Xu… - Advanced functional …, 2010 - Wiley Online Library
High concentrations of defects are introduced into nanoscale ZnO through non‐equilibrium processes and resultant blue emissions are comprehensively analyzed, focusing on defect …
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …
K Sato, L Bergqvist, J Kudrnovský, PH Dederichs… - Reviews of modern …, 2010 - APS
This review summarizes recent first-principles investigations of the electronic structure and magnetism of dilute magnetic semiconductors (DMSs), which are interesting for applications …
Dilute ferromagnetic oxides having Curie temperatures far in excess of 300 K and exceptionally large ordered moments per transition-metal cation challenge our …