Advances in solid state white lighting technologies witness the explosive development of
phosphor materials (down-conversion luminescent materials). A large amount of evidence …

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

This review focuses on the physics of optical excitation dynamics, band gap engineering
and charge carrier dynamics in metal-halide perovskites and their organic hybrids as well as …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

We report on the first demonstration of broadband tunable, single-mode plasmonic
nanolasers (spasers) emitting in the full visible spectrum. These nanolasers are based on a …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Visible‐color‐tunable light‐emitting diodes (LEDs) with electroluminescent color that
changes continuously from red to blue by adjusting the external electric bias are fabricated …

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were
monolithically grown on Si (111) by molecular beam epitaxy, with the emission …