Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application
In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐
volatile memory based on emerging materials can be a promising avenue for introducing …
volatile memory based on emerging materials can be a promising avenue for introducing …
Tuning resistive switching properties of WO3− x-memristors by oxygen vacancy engineering for neuromorphic and memory storage applications
High density memory storage capacity, in-memory computation and neuromorphic
computing utilizing memristors are expected to solve the limitation of von-Neumann …
computing utilizing memristors are expected to solve the limitation of von-Neumann …
Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation
Y Xu, X Han, W Xu, C Ye, Z Dai, X Feng… - Applied Physics …, 2023 - pubs.aip.org
Neuromorphic computing that emulates brain behaviors can address the challenge of von
Neumann bottleneck and is one of the crucial compositions of next-generation computing …
Neumann bottleneck and is one of the crucial compositions of next-generation computing …
Reservoir computing using back-end-of-line SiC-based memristors
D Guo, O Kapur, P Dai, Y Han, R Beanland… - Materials …, 2023 - pubs.rsc.org
The increasing demand for intellectual computers that can efficiently process substantial
amounts of data has resulted in the development of a wide range of nanoelectronics …
amounts of data has resulted in the development of a wide range of nanoelectronics …
Gradual conductance modulation by defect reorganization in amorphous oxide memristors
Amorphous oxides show great prospects in revolutionizing memristors benefiting from their
abundant non-stoichiometric composition. However, an in-depth investigation of the …
abundant non-stoichiometric composition. However, an in-depth investigation of the …
[HTML][HTML] Non-stoichiometric WO3− x-based nanoscale memristor for high-density memory
This work demonstrates forming-free and self-limiting resistive switching characteristics of
non-stoichiometric WO 3− x-based nanoscale devices without using any selector layer …
non-stoichiometric WO 3− x-based nanoscale devices without using any selector layer …
Evolution of Resistive Switching Characteristics in WO3-x-based MIM Devices by Tailoring Oxygen Deficiency
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film
memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of …
memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of …