[HTML][HTML] Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …
Displacement Talbot lithography for nano-engineering of III-nitride materials
Nano-engineering III-nitride semiconductors offers a route to further control the
optoelectronic properties, enabling novel functionalities and applications. Although a variety …
optoelectronic properties, enabling novel functionalities and applications. Although a variety …
UV Emission from GaN Wires with m-Plane Core–Shell GaN/AlGaN Multiple Quantum Wells
The present work reports high-quality nonpolar GaN/Al0. 6Ga0. 4N multiple quantum wells
(MQWs) grown in core–shell geometry by metal–organic vapor-phase epitaxy on the m …
(MQWs) grown in core–shell geometry by metal–organic vapor-phase epitaxy on the m …
Deep UV emission from highly ordered AlGaN/AlN core–shell nanorods
Three-dimensional core–shell nanostructures could resolve key problems existing in
conventional planar deep UV light-emitting diode (LED) technology due to their high …
conventional planar deep UV light-emitting diode (LED) technology due to their high …
Understanding resolution limit of displacement Talbot lithography
PJP Chausse, ED Le Boulbar, SD Lis, PA Shields - Optics express, 2019 - opg.optica.org
Displacement Talbot lithography (DTL) is a new technique for patterning large areas with
sub-micron periodic features with low cost. It has applications in fields that cannot justify the …
sub-micron periodic features with low cost. It has applications in fields that cannot justify the …
AlGaN microfins as nonpolar UV emitters probed by time-resolved cathodoluminescence
Despite the continuous technological progress and recent commercialization of UV light
emitting diodes for sterilization and disinfection applications, the performance of solid-state …
emitting diodes for sterilization and disinfection applications, the performance of solid-state …
Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale
Y Guo, J Yan, Y Zhang, J Wang… - Journal of Nanophotonics, 2018 - spiedigitallibrary.org
AlGaN-based ultraviolet light-emitting diodes (UV LEDs) are promising next-generation UV
sources for a wide variety of applications. The state-of-the-art AlGaN-based UV LEDs exhibit …
sources for a wide variety of applications. The state-of-the-art AlGaN-based UV LEDs exhibit …
Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm
N Gao, J Chen, X Feng, S Lu, W Lin, J Li… - Optical Materials …, 2021 - opg.optica.org
Far-UVC light with emission wavelengths between 207 nm and 222 nm has shown
significant potential for killing pathogens without damaging exposed human tissues and can …
significant potential for killing pathogens without damaging exposed human tissues and can …
Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells
Relaxation of tensile strain in AlGaN heterostructures grown on a GaN template can lead to
the formation of cracks. These extended defects locally degrade the crystal quality, resulting …
the formation of cracks. These extended defects locally degrade the crystal quality, resulting …
[HTML][HTML] Fabrication of uniform, periodic arrays of exotic AlN nanoholes by combining dry etching and hot selective wet etching, accessing geometries unrealisable …
RF Armstrong, P Shields - Microelectronic Engineering, 2025 - Elsevier
Aluminium nitride (AlN) is a wide bandgap semiconductor with far reaching realised and
potential applications in electronics and optoelectronic technology. For example, gallium …
potential applications in electronics and optoelectronic technology. For example, gallium …