Since 1993 it has been recognized that for solar cells based on the chalcogenide absorber
material Cu (In, Ga) Se 2 (CIGSe) the incorporation of Na is crucial to obtain the highest …

Band gap engineering was executed to fabricate a multi-junction stacked ie tandem Cu (In,
Ga) Se2 (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction …

Bilayer CuGa/In precursors were deposited on low-alkali, high-strain-point glass with a
thickness of 1.8 mm by in-line DC-magnetron sputtering of CuGa (24Gawt%) and pure In …

Phase evolution during the synthesis of Cu (InGa) Se2 from glass/Mo/(In1− xGax)
2Se3/CuSe bilayer precursors were investigated by in-situ high-temperature X-ray …

CuGaIn precursors prepared by co-evaporation and co-sputtering processes were
compared. The morphologies, degree of incorporation of Ga into CIGS, and the MoSe2 layer …

摘要采用热等静压烧结法制备Mo–Na 合金, 研究了热等静压烧结温度对Mo–Na 合金显微组织,
硬度, 密度及Na 质量分数的影响, 分析了Mo–Na 合金热等静压烧结的致密化过程. 结果表明 …

Abstract Chalcopyrite Cu (InGa) Se 2 (CIGS) absorbers were fabricated by the formation of
bilayer stacked glass/Mo/(InGa) 2 Se 3/CuSe precursors followed by in-situ thermal …

In der vorliegenden Arbeit werden mit Hilfe einer entwickelten in situ Analysemethode die
Mikrostruktur-und Spannungsentwicklung von Molybdän-und CuInS2-Dünnschichten …

The use of inset thin NaF layers during the rapid thermal processing of stacked bilayer
precursors supplied Na rapidly during the fast formation of Cu (InGa) Se2 with compositional …

The box must contain a summary in a maximum of 1,700 characters, spaces included. The
fabrication of a CuInSe2 thin film solar cell from an electrodeposited precursor stack …