Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate

H Sun, S Mitra, RC Subedi, Y Zhang… - Advanced Functional …, 2019 - Wiley Online Library
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …

Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network

EŞ Tüzemen, AG Yüksek, İ Demir, S Horoz… - Journal of the Australian …, 2023 - Springer
Artificial neural networks (ANNs) are a type of machine learning model that are designed to
mimic the structure and function of biological neurons. They are particularly well-suited for …

[HTML][HTML] Excitation-density and excess-energy dependence of ultrafast dynamics of photoexcited carriers in intrinsic bulk CdTe

Y Chen, T Shu, T Lai, H Wu - Results in Physics, 2021 - Elsevier
In this study, ultrafast dynamics of photoexcited carriers in an intrinsic CdTe film are
investigated deeply and systematically as a function of carrier density and excess energy …

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

M Bouzidi, AS Alshammari, S Soltani, I Halidou… - Materials Science and …, 2021 - Elsevier
We investigated the structural and optical properties of AlGaN films grown on SiN-treated
sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic …

Effect of growth conditions on the Al composition and optical properties of AlxGa1− xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy

S Soltani, M Bouzidi, Z Chine, A Touré, I Halidou… - Thin Solid Films, 2017 - Elsevier
The effect of growth conditions on the Al composition and optical properties of Al x Ga 1− x N
layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated …