Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Catalyst synthesis with precise control over the structure of catalytic active sites at the atomic
level is of essential importance for the scientific understanding of reaction mechanisms and …

Nickel oxide (NiO x), ap‐type oxide semiconductor, has gained significant attention due to its
versatile and tunable properties. It has become one of the critical materials in wide range of …

It is advantageous to construct a dielectric metasurface in silicon due to its compatibility with
cost-effective, mature processes for complementary metal-oxide-semiconductor devices …

Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film
electrodes for Li-ion batteries. In this work, bis (methylcyclopentadienyl) nickel (II)(Ni (MeCp) …

An all-dielectric metasurface is deemed to serve a potential platform to demonstrate spectral
filters. Silicon-rich silicon nitride (SRN), which contains a relatively large portion of silicon …

Semiconductors such as elemental silicon allowing both p‐type and n‐type doping are the
backbone of the current microelectronics industry, while the continuous progress in …

Nanostructure based color filtering has been considered an attractive replacement for
current colorant pigmentation in the display technologies, in view of its increased …

A novel atomic layer deposition (ALD) process for nickel oxide (NiO) is developed using a
recently reported diazadienyl complex, Ni (t Bu2DAD) 2, and ozone. A window of constant …

Polycrystalline nickel oxide is deposited on SiO2 substrates by alternating pulses of bis (2, 2,
6, 6‐tetramethylheptane‐3, 5‐dionato) nickel (II)(Ni (thd) 2) and H2O. The deposition …