Nanoelectromechanical switches for low-power digital computing
A Peschot, C Qian, TJ King Liu - Micromachines, 2015 - mdpi.com
The need for more energy-efficient solid-state switches beyond complementary metal-oxide-
semiconductor (CMOS) transistors has become a major concern as the power consumption …
semiconductor (CMOS) transistors has become a major concern as the power consumption …
The impact of on-chip communication on memory technologies for neuromorphic systems
Emergent nanoscale non-volatile memory technologies with high integration density offer a
promising solution to overcome the scalability limitations of CMOS-based neural networks …
promising solution to overcome the scalability limitations of CMOS-based neural networks …
Steep slope devices and TFETs
Reducing energy dissipations per function with the integrated circuit (IC) chips is always an
appealing research topic. Techniques in the fundamental electronic device levels are being …
appealing research topic. Techniques in the fundamental electronic device levels are being …
Back-end-of-line nano-electro-mechanical switches for reconfigurable interconnects
Non-volatile (NV) nano-electro-mechanical (NEM) switches are successfully implemented
using multiple metallic layers in a standard 65 nm CMOS back-end-of-line (BEOL) process …
using multiple metallic layers in a standard 65 nm CMOS back-end-of-line (BEOL) process …
Toward monolithically integrated hybrid CMOS-NEM circuits
U Sikder, K Horace-Herron, TT Yen… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Nanoelectromechanical (NEM) switches offer the advantages of zero OFF-state leakage
current, abrupt switching characteristics, nonvolatile (NV) operation, and relatively low ON …
current, abrupt switching characteristics, nonvolatile (NV) operation, and relatively low ON …
Sub-100 mV computing with electro-mechanical relays
The energy efficiency of a CMOS digital logic circuit is fundamentally limited by the nonideal
switching behavior of transistors, specifically their nonzero off-state current and finite …
switching behavior of transistors, specifically their nonzero off-state current and finite …
Beyond cmos
S Das, A Chen, M Marinella - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
Dimensional and functional scaling 1 1 Functional Scaling: Suppose that a system has been
realized to execute a specific function in a given, currently available, technology. We say that …
realized to execute a specific function in a given, currently available, technology. We say that …
Ge-Based Asymmetric RRAM Enable Content Addressable Memory
In this work, we developed an asymmetric Ge-based RRAM using a fully CMOS compatible
process. Due to the adoption of a thin AlO x/GeO x interfacial layer, the TiN/HfO x/AlO x/GeO …
process. Due to the adoption of a thin AlO x/GeO x interfacial layer, the TiN/HfO x/AlO x/GeO …
Non-volatile nano-electro-mechanical memory for energy-efficient data searching
K Kato, V Stojanović, TJK Liu - IEEE Electron Device Letters, 2015 - ieeexplore.ieee.org
A compact non-volatile nano-electro-mechanical memory (NV-NEMory) cell design together
with a novel memory array architecture and operating scheme is proposed for real-time data …
with a novel memory array architecture and operating scheme is proposed for real-time data …
Sub-50-mV nanoelectromechanical switch without body bias
S Saha, MS Baghini, M Goel… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This brief presents a fabricated and characterized 3-terminal (3T) nanoelectromechanical
switch (NEMS) featuring for the first time a sub-50-mV pull-in voltage operation without body …
switch (NEMS) featuring for the first time a sub-50-mV pull-in voltage operation without body …