In a combined experimental and numerical investigation, we present the effects of trap‐
assisted tunneling on the sub‐threshold forward bias characteristics of a blue InGaN/GaN …

Organic photovoltaic (OPV) cells have experienced significant development in the last
decades after the introduction of nonfullerene acceptor molecules with top power conversion …

Vertical light-emitting diodes (LEDs) have many advantages such as uniform current
injection, excellent scalability of the chip size, and simple packaging process. Hitherto …

The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and
Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was …

We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV)
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …

We have studied the design, epitaxy, and performance characteristics of deep ultraviolet
(UV) AlGaN light emitting diodes (LEDs). By combining the tunnel junction and polarization …

Ultrawide‐bandgap semiconductors such as AlN, BN, and diamond hold tremendous
promise for high‐efficiency deep‐ultraviolet optoelectronics and high‐power/frequency …

We present a combined theoretical, numerical and experimental investigation on trap-
assisted tunneling (TAT) in the subthreshold regime of III-nitride-based light-emitting diodes …

In this paper, a gradient electron blocking layer (GEBL) is introduced to improve efficiency of
deep‐ultraviolet light‐emitting diodes (DUV‐LEDs). Various structures of DUV‐LEDs are …

The optical features of green InGaN/GaN light-emitting diodes (LEDs) with a graded Si-
doped short-period InGaN/GaN superlattice (GSL) were examined by photoluminescence …