The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

The authors report an enhanced infrared spectral response of GaAs-based solar cells that
incorporate type II GaSb quantum dots (QDs) formed using interfacial misfit array growth …

We report on the controlled light confinement in microtube bottle resonators formed by rolled-
up strained semiconductor bilayers. We experimentally and theoretically discuss two …

The electron states in a two-dimensional quantum dot ring are calculated in the presence of
a donor impurity atom under the effective mass and parabolic band approximations. The …

A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is
investigated in this paper. The room-temperature photoluminescence peak blueshift with …

Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied
using cross-sectional scanning tunneling microscopy. These quantum rings have an outer …

In this study, we demonstrate a detailed strain analysis of the heterogeneously coupled
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …

The authors report the optical characteristics of Ga Sb∕ Ga As self-assembled quantum
dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of …

GaSb quantum rings in GaAs were studied by cross-sectional scanning tunneling
microscopy. The quantum rings have an outer shape of a truncated pyramid with typical …

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum
dots grown by molecular beam epitaxy. Various nanostructures are observed as a function …