Magnetic sensors are key elements in many industrial, security, military, and biomedical
applications. Heusler alloys are promising materials for magnetic sensor applications due to …

In this work, the quasi-analog to discrete transition occurring in the current–voltage
characteristic of oxygen engineered yttrium oxide-based resistive random-access memory …

The Abisko project aims to develop an energy-efficient spiking neural network (SNN)
computing architecture and software system capable of autonomous learning and operation …

The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory
devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of …

Swift heavy ion (SHI) irradiation is an effective method for modulating the properties of thin
oxide films by introducing defects, strains, and structural transformations. Here, we applied …

Abstract Ge₂Sb₂Te₅ (GST) phase-change materials are crucial for memory and data
storage technologies, especially in harsh radiation conditions; yet, their response to …

The ion irradiation on 100 nm and 200 nm HfO 2 films was performed using a 2 MeV Kr 8+
beam at three different fluences viz. 1.5× 10 15 ions/cm 2, 2× 10 15 ions/cm 2 and 2.5× 10 …

Zr-doped HfO2 (HZO)-based germanium (Ge) p-channel ferroelectric FET (p-FeFET)
memory devices with microwave annealing (MWA) followed by rapid thermal annealing …

The proton irradiation effects on TiN/Zr-doped HfO 2 (HZO)/TiN ferroelectric capacitors are
investigated in this work. Electrical characterization results show that the change of …

The results are presented on changes in the parameters of pseudo-MOS transistors based
on silicon-on-sapphire (SOS) mesastructures upon irradiation with swift heavy ions (SHIs) of …