We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics
and electronics. Their application has progressed greatly thanks to the continuous quality …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Nitride semiconductors are the materials of choice for a variety of device applications,
notably optoelectronics, and high-frequency/high-power electronics. One important practical …

The thermal conductivity (Λ) of wide-band-gap semiconductors GaN and SiC is critical for
their application in power devices and optoelectronics. Here, we report time-domain …

Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy.
Growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The use of micro‐Raman spectroscopy to monitor non‐invasively GaN, AlGaN and AlN
material parameters for process and growth monitoring/control is demonstrated. Concepts to …

We study the influence of nitrogen, a potential acceptor in ZnO, on the lattice dynamics of
ZnO. A series of samples grown by chemical vapor deposition (CVD) containing different …