FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …

In this paper, a fin-shaped field effect transistor (FinFET) structure which uses ground plane
concept is proposed and theoretically investigated. The ground plane reduces the coupling …

We have investigated the electron mobility in ultrathin-body InGaAs-on-insulator devices
using physics-based modeling that self-consistently accounts for quantum confinement and …

This work presents, performance evaluation of linearity and intermodulation distortion of
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …

In this paper, the effect of carrier quantization on device characteristics and stress-induced
device degradation for multifin high-κ/metal tri-gate n-type and p-type fin field-effect …

Superior scalability and better gate-to-channel capacitive coupling can be achieved with
adopting gate-all-around (GAA) device architecture. However, compared against FinFET …

This study investigates the performance of the junctionless accumulation‐mode (JAM) bulk
FinFETs. Different electrical parameters are simulated and analysed for the device with …

This paper investigates the impact of fin width (W fin s= 15, 20, and 25 nm) in a double-gate
n-type FinFET on the performance and reliability of the device. Carrier conduction in the Si …

This work investigates the innovative design of a 14 nm bulk 3D non-rectangular structure fin
field-effect transistor (FinFET). By incorporating a cylindrical trapezoidal structure into the …

In this paper, the impact of width quantization on device characteristic and stressing induced
device degradation for high-k/metal tri-gate n/p-type FinFET was investigated well including …