We performed hybrid functional calculations of native point defects and dangling bonds
(DBs) in α-Al 2 O 3 to aid in the identification of charge-trap and fixed-charge centers in Al 2 …

High-k oxide insulators (Al 2 O 3 and HfO 2) have been deposited on a single crystalline
hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at …

Using first-principles calculations based on density functional theory, we investigate the
impact of defects near interfaces of semiconductor channel materials and oxide dielectrics …

We perform first‐principles calculations to investigate the electronic structure of native
defects in various oxide dielectrics to address the impact of defects on GaN/oxide metal …

GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors
(MOSHFETs) with Al 2 O 3 gate oxide and in situ AlN passivation were investigated …

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast
approaching its limits. The extension of the logic device roadmap for future enhancements in …