The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …

Resistive random‐access memory (RRAM) is a promising candidate for next‐generation
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …

With the development of artificial intelligence systems, it is necessary to develop
optoelectronic devices with photoresponse and storage capacity to simulate human visual …

Although the basic concept was proposed only about 10 years ago, multiferroic tunnel
junctions (MFTJs) with a ferroelectric barrier sandwiched between two ferromagnetic …

In this study, we report on enhanced resistive memory in BaTiO 3-based ferroelectric diodes
due to the doping of donors. A large ON/OFF current ratio of∼ 2000, about two orders of …

Multiferroic materials 1, 2 are a special class of functional compounds in which at least two
ferroic orderings, such as ferroelectric,(anti-) ferromagnetic, ferroelastic, and ferrotoroidic …

Direct evidence of purely interfacial effects on resistance switching is demonstrated in
Au/BiFeO3/Nd: SrTiO3 (001)(Au/BFO/NSTO) Schottky junctions by reducing the thickness of …

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO3
(BTO) and few-layer MoSe2 are combined in a single structure. The C–V loops reveal the …

In ferroelectric-based integrated devices, there are usually buffer layers between
ferroelectric films and semiconductor substrates. Here, Bi x% FeO3− δ (x= 95, 100, and …

A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched
between two ferromagnetic layers, presents at least four resistance states in a single …