Resistive memory devices at the thinnest limit: progress and challenges

XD Li, NK Chen, BQ Wang, M Niu, M Xu… - Advanced …, 2024 - Wiley Online Library
The Si‐based integrated circuits industry has been developing for more than half a century,
by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will …

Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM

J Park, TH Kim, O Kwon, M Ismail, C Mahata, Y Kim… - Nano Energy, 2022 - Elsevier
Abstract We developed W/HfO 2/TiN vertical resistive random-access memory (VRRAM) for
neuromorphic computing. First, basic electrical properties, such as current–voltage curves …

Exploiting non-idealities of resistive switching memories for efficient machine learning

V Yon, A Amirsoleimani, F Alibart, RG Melko… - Frontiers in …, 2022 - frontiersin.org
Novel computing architectures based on resistive switching memories (also known as
memristors or RRAMs) have been shown to be promising approaches for tackling the …

A TaOx-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Y Qin, Z Wang, Y Ling, Y Cai, R Huang - Electronics, 2021 - mdpi.com
Resistive random-access memory (RRAM) with the ability to store and process information
has been considered to be one of the most promising emerging devices to emulate synaptic …

Crossbar-level retention characterization in analog RRAM array-based computation-in-memory system

M Zhao, B Gao, P Yao, Q Zhang, Y Zhou… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The reliability issues bring great challenges in the performance maintenance of computation-
in-memory (CIM), especially based on large-scale resistive random access memory (RRAM) …

Temperature-dependent accuracy analysis and resistance temperature correction in RRAM-based in-memory computing

Y Ling, Z Wang, Z Yu, S Bao, Y Yang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, a precise electro-thermal modeling framework of resistive random access
memory (RRAM) fabricated using a commercial 40 nm CMOS back end of line (BEOL) …

Effect of temperature on analog memristor in neuromorphic computing

Y Huang, R Hopkins, D Janosky… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, the influence of the temperature instability of resistive memory switching on
potential neuromorphic computing applications is extensively studied using an Intel TaOx …

Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array

X Zhai, E Li, Y Niu, D Li, W Chen - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
With switching dynamics similar to synapses, resistive random access memories (RRAMs)
provide the solutions for brain-inspired computing. In this article, a compact model for a …

A new insight and modeling of pulse-to-pulse variability in analog resistive memory for on-chip training

Z Yu, Z Wang, S Bao, Y Ling, Y Cai… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Pulse-to-pulse variability (PPV) is a vital nonideal effect in analog resistive memory,
particularly for online training in emerging computing paradigms. The reported PPVs usually …

Computational failure analysis of in-memory rram architecture for pattern classification cnn circuits

NL Prabhu, N Raghavan - IEEE Access, 2021 - ieeexplore.ieee.org
Power-efficient data processing subsystems performing millions of complex concurrent
arithmetic operations per second form part of today's essential solution required to meet the …