Recent technological demand of FinFETs have been explored and reviewed in this work.
The downscaling of the conventional MOSFET urge to the researchers to innovate new …

A comparative analysis of the trigate fin-shaped field-effect transistor (FinFET) and quantum
FinFET (QFinFET) is carried out by using density gradient quantization models in the …

Gate-all-around (GAA) nanosheet field-effect transistors (NSFETs) are hailed as the most
promising architecture for the incessant scaling of MOSFETs to the sub-5-nm technology …

This paper presents a review on the development of parasitic-capacitance modeling for
metal–oxide–semiconductor field-effect transistors (MOSFETs), covering models developed …

A charge based trans-capacitance model is proposed for undoped or lightly doped Trigate
FinFET. The drain current continuity principle and the Ward-Dutton linear charge partition …

A unified model for multigate negative capacitance transistors with self-heating effects
(SHEs) is developed. With a metal–ferroelectric–insulator–semiconductor (MFIS) structure …

The gate-all-around nanosheet (NS) field effect transistors (FETs) are hailed as the most
promising candidate for scaling the CMOS technology beyond the 5-nm technology node …

Recent studies on FinFET pointed out the advantage of immunity from short channel effects
(SCEs) and their performances at high frequencies need attention. In this paper, we review …

In VLSI design due to continuous increase in chip density and decline in size of CMOS
technology node, number of interconnects become one of the major concern. To avoid …

Recent studies have pointed out that FinFET are immune to short channel effects (SCEs) but
their performances at high frequencies are compromised due to strong fringing field …