Because of trapped charges in GaN transistor structure, device dynamic on-state resistance
R_DSon is increased when it is operated in high frequency switched power converters, in …

Emerging GaN high electron mobility transistors have become a popular choice in high-
efficiency, high-speed power circuits, owing to superb switching figure of merits. However …

There is no doubt that in the future, a need for higher switching frequency is inevitable to
extract the full benefits of reliable Gallium Nitride (GaN) device characteristics. Along with …

There is a need for a foundation of a research study aimed at investigations on near real-
time reliability awareness of Gallium Nitride devices in high-frequency power converters for …

The explosive growth of power electronics has resulted in high power demand and more
stringent requirements on power conversion systems. When bridging an increasing high …

This work addresses the industrial issue of evaluating integrity of Gallium Nitride (GaN) field
effect transistor that is operational in a circuit. It focused on the device bulk because the …

Solid-state transformer (SST) is an integral part of the compact electric vehicle charging,
smart home, smart grid, and other emerging technologies. State-of-the-art SST controls the …