The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …
S Li, X Liu, H Yang, H Zhu, X Fang - Nature Electronics, 2024 - nature.com
High dielectric constant (high-κ) gate dielectrics compatible with two-dimensional (2D) semiconductors are essential for scaled optoelectronic devices. However, conventional …
AJ Yang, K Han, K Huang, C Ye, W Wen, R Zhu… - Nature …, 2022 - nature.com
Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high …
J Tang, Q Wang, J Tian, X Li, N Li, Y Peng, X Li… - Nature …, 2023 - nature.com
Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important …
Abstract 2D materials are regarded as promising electrode materials for rechargeable batteries because of their advantages in providing ample active sites and improving …
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
X Liu, T Ma, N Pinna, J Zhang - Advanced Functional Materials, 2017 - Wiley Online Library
Two‐dimensional (2D) nanostructures are highly attractive for fabricating nanodevices due to their high surface‐to‐volume ratio and good compatibility with device design. In recent …
Two-dimensional semiconductors could be used as a channel material in low-power transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials …