[HTML][HTML] Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture
We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a
photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to …
photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to …
Effect of the lattice mismatch on threading dislocations in heteroepitaxial GaN layers revealed by X-ray diffraction
In this study, structural investigations of the mismatched gallium nitride (GaN) layers grown
on SiC, Al 2 O 3 and Si substrate, were performed employing x-ray diffraction techniques …
on SiC, Al 2 O 3 and Si substrate, were performed employing x-ray diffraction techniques …
The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content
X Li, DG Zhao, DS Jiang, P Chen, ZS Liu… - … status solidi (a), 2016 - Wiley Online Library
The effects of Al composition in p‐type AlGaN electron blocking layer (EBL) on electron
leakage and device performance in InGaN‐based quantum well (QW) laser diodes (LDs) …
leakage and device performance in InGaN‐based quantum well (QW) laser diodes (LDs) …
The critical impact of the waveguide thickness on the optical and threshold behaviors of InGaN-based green laser diodes
S Li, H Chen, M Lei, G Yu, L Meng, H Zong, S Jiang… - Optik, 2023 - Elsevier
We study the optical structures of green (520 nm) InGaN-based laser diodes (LDs) with the
complex 1D transfer matrix method, in consideration of the anti-guiding effect and mode …
complex 1D transfer matrix method, in consideration of the anti-guiding effect and mode …
Influence of substrate misorientation on the emission and waveguiding properties of a blue (In, Al, Ga) N laser-like structure studied by synchrotron radiation …
A Kafar, A Sakaki, R Ishii, S Stanczyk… - Photonics …, 2021 - opg.optica.org
In this work, we study how an epitaxial laser-like (or superluminescent diode-like) structure
is modified by intentional changes of the substrate misorientation in the range of 0.5°–2.6° …
is modified by intentional changes of the substrate misorientation in the range of 0.5°–2.6° …
Semiconductor laser and method for producing a semiconductor laser
F Singer, N Von Malm, T Ruegheimer… - US Patent …, 2020 - Google Patents
In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor
layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23) …
layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23) …
[图书][B] III-Nitride Vertical-Cavity Surface-Emitting Lasers
JT Leonard - 2016 - search.proquest.com
Vertical-cavity surface-emitting lasers (VCSELs) have a long history of development in GaAs-
based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet …
based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet …
[图书][B] Optimierung der Prozesstechnologie und Steigerung der Zuverlässigkeit und Lebensdauer von (InAlGa) N-basierten Halbleiterlaserdioden
E Freier - 2022 - books.google.com
In der vorliegenden Arbeit werden Aspekte der Chipprozessierung untersucht, die die
Zuverlässigkeit von (InAlGa) N-basierten Rippenwellenleiterlaserdioden beeinflussen. Als …
Zuverlässigkeit von (InAlGa) N-basierten Rippenwellenleiterlaserdioden beeinflussen. Als …
Semiconductor laser and method for producing a semiconductor laser
F Singer, N Von Malm, T Ruegheimer… - US Patent …, 2021 - Google Patents
In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor
layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23) …
layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23) …
III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs
JT Leonard - 2016 - escholarship.org
Vertical-cavity surface-emitting lasers (VCSELs) have a long history of development in GaAs-
based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet …
based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet …